2011/05/26 by Rahul Mishra, Mishra, Rahul, Bahniman Ghosh +1
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Nanowire Synthesis and Applications #Semiconductor materials and devices #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.1105.5260
arxiv created 2011/05/26 · openalex publication_date 2011/05/26 · arxiv updated 2011/05/27 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
In recent past extensive device simulation work has already been done on TFETs. Various ways have been suggested to model TFETs. In our paper we look at one such particular way to model these devices. The Non equilibrium green's formalism has proved effective in modeling nano scale devices. We model complete SiGe and GaAs tunnel FET for the first time using the NEGF formalism, also taking acoustic phonon scattering into account. We analyze them on the grounds of I-V curve, Ion-Ioff ration and subthreshold slope. The poisson equation and the equilibrium statistical mechanical equation has been solved by providing the potential profile.