2016/11/07 by David Fuertes Marrón, Marrón, D. Fuertes
Engineering · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Semiconductor Quantum Structures and Devices #Surface and Thin Film Phenomena
paper · pdf · doi:10.48550/arxiv.1611.02097
openalex publication_date 2016/11/07 · openalex created_date 2016/11/30 · openalex updated_date 2026/07/28
Photoreflectance is used for the characterisation of semiconductor samples, usually by sweeping the monochromatized probe beam within the energy range comprised between the highest value set by the pump beam and the lowest absorption threshold of the sample. There is, however, no fundamental upper limit for the probe beam other than the limited spectral content of the source and the responsivity of the detector. As long as the modulation mechanism behind photoreflectance does affect the complete electronic structure of the material under study, sweeping the probe beam upstream towards higher energies from that of the pump source is equally effective in order to probe high energy critical points. This fact, up to now largely overseen, is shown experimentally in this work. E1 and E0+Δ0 critical points of bulk GaAs are unambiguously resolved using pump light of lower energy. Upstream modulation may widen further applications of the technique.