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Memory Effect in the Photoinduced Femtosecond Rotation of Magnetization in the Ferromagnetic Semiconductor GaMnAs

2008/04/22 by J. Wang, Ingrid Cotoros, I. Cotoros +12
Engineering · Neuroscience · Physics and Astronomy · #Advanced Fiber Laser Technologies #Neurobiology and Insect Physiology Research #Photonic and Optical Devices #cond-mat.mtrl-sci #cond-mat.str-el

paper · pdf · doi:10.48550/arxiv.0804.3456

arxiv created 2008/04/22 · arxiv updated 2009/12/01

Abstract

We report a femtosecond response in photoinduced magnetization rotation in the ferromagnetic semiconductor GaMnAs, which allows for detection of a four-state magnetic memory at the femtosecond time scale. The temporal profile of this cooperative magnetization rotation exhibits a discontinuity that reveals two distinct temporal regimes, marked by the transition from a highly non-equilibrium, carrier-mediated regime within the first 200 fs, to a thermal, lattice-heating picosecond regime.

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