2015/10/13 by Mathias Gehlmann, Gehlmann, Mathias, Gustav Bihlmayer +21 · 1 citation
Materials Science · #2D Materials and Applications #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Machine Learning in Materials Science #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
paper · pdf · doi:10.48550/arxiv.1510.04101
openalex publication_date 2015/10/13 · openalex created_date 2022/10/03 · openalex updated_date 2026/08/04
Time reversal dictates that nonmagnetic, centrosymmetric crystals cannot be\nspin-polarized as a whole. However, it has been recently shown that the\nelectronic structure in these crystals can in fact show regions of high\nspin-polarization, as long as it is probed locally in real and in reciprocal\nspace. In this article we present the first observation of this type of\ncompensated polarization in MoS2 bulk crystals. Using spin- and\nangle-resolved photoemission spectroscopy (ARPES) we directly observed a\nspin-polarization of more than 65% for distinct valleys in the electronic band\nstructure. By additionally evaluating the probing depth of our method we find\nthat these valence band states at the \\K point in the\nBrillouin zone are close to fully polarized for the individual atomic trilayers\nof MoS2, which is confirmed by our density functional theory calculations.\nFurthermore, we show that this spin-layer locking leads to the observation of\nhighly spin-polarized bands in ARPES since these states are almost completely\nconfined within two dimensions. Our findings prove that these highly desired\nproperties of MoS2 can be accessed without thinning it down to the monolayer\nlimit.\n