2020/06/19 by D. Gogova, V. S. Olsen, Vegard Skiftestad Olsen +17
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Boron and Carbon Nanomaterials Research #Chemistry #Composite material #Dislocation #Electron mobility #Epitaxy #FOS: Physical sciences #Layer (electronics) #Machine Learning in Materials Science #Materials Science (cond-mat.mtrl-sci) #Materials science #Metal and Thin Film Mechanics #Nanotechnology #Optoelectronics #Semiconductor #Sputter deposition #Sputtering #Stoichiometry #Substrate (aquarium) #Thin film #Transmission electron microscopy #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.2006.10995
20 pages, 4 figures, 1 Table
arxiv created 2020/06/19 · openalex publication_date 2020/06/19 · arxiv updated 2020/06/22 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/06
Making a systematic effort, we have developed a single-crystalline ZnSnN2 on ZnO (0001) by reactive magnetron co-sputtering. Epitaxial growth was achieved at 350 C by co-sputtering from metal targets in nitrogen atmosphere, and confirmed by transmission electron microscopy (TEM) measurements. TEM verified that the layers are single-crystalline of hexagonal phase, exhibiting epitaxial relationship with the substrate. The screw-type threading dislocations originating from the interface were identified as dominant extended defects. More specifically, we report a pioneering measurement of the dislocation density in this material. Even though, there is no literature data for direct comparison, such values are typical of heteroepitaxial growth of III-nitride layers without applying defect density reduction strategies. The films demonstrated a record electron mobility. The optical bandgaps of 1.86 eV and 1.72 eV were determined for the stoichiometric and Zn-rich samples, respectively. As such, we conclude that ZnSnN2 is an earth-abundant, environmentally-friendly semiconductor and is a promising candidate for cost efficient components in electronics and photonics.