Precise determination of two-carrier transport properties in the topological insulator TlBiSe₂

2015/05/21 by G. Eguchi, Eguchi, G., Kenta Kuroda +11
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Phase-change materials and chalcogenides #Photorefractive and Nonlinear Optics #Strongly Correlated Electrons (cond-mat.str-el) #Topological Materials and Phenomena

paper · pdf · doi:10.48550/arxiv.1505.05624

openalex publication_date 2015/05/21 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We report the electric transport study of the three-dimensional topological insulator TlBiSe₂. We applied a newly developed analysis procedure and precisely determined two-carrier transport properties. Magnetotransport properties revealed a multicarrier conduction of high- and low-mobility electrons in the bulk, which was in qualitative agreement with angle-resolved photoemission results~[K. Kuroda et~al., Phys. Rev. Lett. \bm105, 146801 (2010)]. The temperature dependence of the Hall mobility was explained well with the conventional Bloch-Grüneisen formula and yielded the Debye temperature \varTheta_\rmD=113 ± 14~K. The results indicate that the scattering of bulk electrons is dominated by acoustic phonons.

Related

• Independence of topological surface state and bulk conductances in three-dimensional topological insulators
• High and Magnetic-field-dependent Surface Carriers Mobility in 3D Topological Insulators without Bulk States
• Transport evidence for the coexistence of the topological surface state and a two-dimensional electron gas in BiSbTe3 topological insulator
• Controlling and distinguishing electronic transport of topological and trivial surface states in a topological insulator
• Probing Topological Surface States and Conduction via Extended Defects in (Bi_1-xSb_x)₂Te₃ Films