Anomalous Hall Effect in Thin Bismuth

2024/02/28 by Oulin Yu, Sujatha Vijayakrishnan, Yu, Oulin +7 · 1 citation
Chemistry · Physics and Astronomy · #Advanced Chemical Physics Studies #Advanced Physical and Chemical Molecular Interactions #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Topological Materials and Phenomena

paper · pdf · doi:10.48550/arxiv.2402.18441

openalex publication_date 2024/02/28 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Bismuth, the heaviest of all group V elements with strong spin-orbit coupling, is famously known to exhibit many interesting transport properties, and effects such as Shubnikov-de Haas and de Haas-van Alphen were first revealed in its bulk form. However, the transport properties have not yet been fully explored experimentally in thin bismuth nor in its 2D limit. In this work, bismuth flakes with average thicknesses ranging from 29 to 69 nm were mechanically exfoliated by a micro-trench technique and were used to fabricate four-point devices. Due to mixing of components, Onsager's relations were used to extract the longitudinal (R_xx) and Hall (R_xy) resistances where the latter shows a Hall anomaly that is consistent with the Anomalous Hall Effect (AHE). Our work strongly suggests that that there could be a hidden mechanism for time-reversal symmetry breaking in pure bismuth thin films.

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