2010/09/01 by Zhiqiang Luo, Luo, Zhiqiang, Ting Yu +15
Materials Science · Physics and Astronomy · #Diamond and Carbon-based Materials Research #FOS: Physical sciences #Graphene research and applications #Materials Science (cond-mat.mtrl-sci) #Supercapacitor Materials and Fabrication #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1009.0091
15 pages, 4 figures, 1 table
openalex publication_date 2010/09/01 · arxiv created 2010/12/03 · arxiv updated 2010/12/06 · openalex created_date 2019/06/27 · openalex updated_date 2026/07/28
The electronic structure and structural evolution of hydrogenated graphene are investigated by Raman spectroscopy with multiple excitations. The excitation energy dependent saturation effect on the ratio of integrated intensities of D and G modes (ID/IG) is revealed and further developed as a quick method for estimation of inter-defect distance and defect density in hydrogenated graphene. At low hydrogen coverage, the chemisorbed H atoms behave like defects in sp2 C=C matrix; while for a high hydrogen coverage, the sp3 C-H bonds become coalescent clusters, resulting in confinement effect on the sp2 C domains. Electronic structure changes caused by varying hydrogen coverage are evidenced by excitation energy dependent red shift of D and 2D bands. Our results provide a useful guide for developing applications of hydrogenated graphene, as well as using Raman spectroscopy as quick metrology of the defect density in further exploring other kinds of graphene derivatives.