2010/12/24 by Qilin Gu, B. Wang, Gu, Qilin +1
Materials Science · Physics and Astronomy · #Copper-based nanomaterials and applications #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1012.5338
12 pages, 4 figures, typos corrected, format changed
openalex publication_date 2010/12/24 · arxiv created 2011/01/27 · arxiv updated 2011/01/31 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Cuprous oxide (Cu2O) nanowires were grown by a simple, catalyst-free thermal oxidation method starting from a copper foil substrate. Wire growth was performed at different conditions by varying oxygen partial pressure and heating temperature, and produced structural defects such as stacking faults and twin structures of grown nanowires were characterized by transmission electron microscopy. A moderate oxygen partial pressure ~5% with a relatively high temperature at 500 oC is found to be an optimal condition for growing high-quality Cu2O nanowires, while either lowering temperature or enhancing O2 partial pressure can yield higher density of planar defects. In order to further investigate optical properties of grown nanowires, photoluminescence measurements were also performed and correlated with structural characterization results, indicating that increase of structural defects such as stacking faults and twins tended to enhance broad defect-related emissions and suppress the exciton emissions near Cu2O band-edge.