2022/11/19 by Ida Sadeghi, Jack Van Sambeek, Sadeghi, Ida +13 · 1 citation
Engineering · Materials Science · #Advanced Thermoelectric Materials and Devices #Chalcogenide Semiconductor Thin Films #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Perovskite Materials and Applications
paper · pdf · doi:10.48550/arxiv.2211.10787
openalex publication_date 2022/11/19 · openalex created_date 2023/02/16 · openalex updated_date 2026/07/28
Optoelectronic technologies are based on families of semiconductor alloys. It is rare that a new semiconductor alloy family is developed to the point where epitaxial growth is possible; since the 1950s, this has happened approximately once per decade. Here we demonstrate epitaxial thin film growth of semiconducting chalcogenide perovskite alloys in the Ba-Zr-S-Se system by gas-source molecular beam epitaxy (MBE). We stabilize the full range y = 0 ... 3 of compositions BaZrS(3-y)Sey in the perovskite structure, up to and including BaZrSe3, by growing on BaZrS3 epitaxial templates. The resulting films are environmentally stable and the direct band gap (Eg) varies strongly with Se content, as predicted by theory, covering the range Eg = 1.9 ... 1.4 eV for y = 0 ... 3. This creates possibilities for visible and near-infrared (VIS-NIR) optoelectronics, solid state lighting, and solar cells using chalcogenide perovskites.