2008/09/26 by Masatsugu Suzuki, Suzuki, Masatsugu, Itsuko S. Suzuki +1
Engineering · Materials Science · Physics and Astronomy · #Advancements in Battery Materials #Disordered Systems and Neural Networks (cond-mat.dis-nn) #FOS: Physical sciences #Graphene research and applications #Transition Metal Oxide Nanomaterials #cond-mat.dis-nn
paper · pdf · doi:10.48550/arxiv.0809.4723
11 pages. 13 figures, 1 table
arxiv created 2008/09/26 · openalex publication_date 2008/09/26 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Memory and aging behaviors in stage-2 CoCl2 GIC (Tcu = 8.9 K and Tcl = 6.9 K) have been studied using low frequency (f = 0.1 Hz) AC magnetic susceptibility (χ′ and χ′′) as well as thermoremnant magnetization. There occurs a crossover from a cumulative aging (mainly) with a partial memory effect for the domain-growth in the intermediate state between Tcu and Tcl to an aging and memory in a spin glass phase below Tcl. When the system is aged at single or multiple stop and wait processes at stop temperatures Ts's below Tcl for wait times ts, the AC magnetic susceptibility shows single or multiple aging dips at Ts's on reheating. The depth of the aging dips is logarithmically proportional to the wait time ts. Very weak aging dip between Tcu and Tcl indicates the existence of a partial memory effect. The sign of the difference between the reference cooling and reference heating curves changes from positive to negative on crossing Tcl from the high T-side. The time dependence of χ′ and χ′′ below Tcl is described by a scaling function of ωt. its a local maximum at 6.5 K just below Tcl, and drastically decreases with increasing T. The nature of the cumulative aging between Tcl and Tcu is also examined.