Thermopower in p-type GaAs/AlGaAs layers

2000/04/17 by M. Tsaousidou, Tsaousidou, M., P. N. Butcher +7
Physics and Astronomy · #Condensed Matter (cond-mat) #FOS: Physical sciences #cond-mat

paper · pdf · doi:10.48550/arxiv.cond-mat/0004274

RevTex, 7 pages (included 2 eps figures). Proceedings of the 24th International Conference on the Physics of Semiconductors, ICPS24 Jerusalem August 1998

arxiv created 2000/04/17 · arxiv updated 2009/11/30

Abstract

We explain for the first time thermopower data for p-type GaAs/AlGaAs layers. The data span a temperature range between 0.2 to 1.2K. We calculate both the diffusion S^d and the phonon-drag S^g contributions to the thermopower. We find that S^d is significant for temperatures up to 0.3K while at higher temperatures S^g dominates. The calculated and measured S^g agree very well with no adjustable parameters.

Related

• Thermomodulation studies of heat transport in heavy-doped n-GaAs by using the temperature dependence of metal-semiconductor contact resistance
• Pisarenko's Formula for the Thermopower
• Universal Limits of Thermopower and Figure of Merit from Transport Energy Statistics
• An electrical probe of the phonon mean-free path spectrum
• Phonon-Drag Thermopower at High Temperatures