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Origin and the role of device physics in the magnetic field effect in organic semiconductor devices

2010/03/24 by B. K. Li, Hongtao He, H. T. He +11
Engineering · Materials Science · Physics and Astronomy · #Conducting polymers and applications #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Organic Electronics and Photovoltaics #Organic Light-Emitting Diodes Research #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.1003.4685

6 pages, 5 figures

arxiv created 2010/03/24 · openalex publication_date 2010/03/24 · arxiv updated 2010/03/25 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

A small magnetic field (~30 mT) can effectively modulate the electroluminescence, conductance and/or photocurrent of organic semiconductor based devices, up to 10% at room temperature. This organic magnetic field effect (OMFE) is one of the most unusual phenomena of both organic electronics and, more basically, magnetism, since all device components are nonmagnetic. However, in spite of latest surge of research interest, its underlying mechanism is still hotly debated. Here we experimentally identify that the magnetic field induced increase of intersystem crossing rate (between either excitons or polaron pairs), and decrease of triplet exciton-polaron quenching rate are responsible for the observed OMFEs. The diversity of observed OMFE results, such as sign change and operating condition dependence, originates from the difference of devices physics.

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