2008/11/03 by L. Siddiqui, Dipankar Saha, Siddiqui, L. +7
Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.0811.0204
7 pages, 6 figures
arxiv created 2008/11/03 · openalex publication_date 2008/11/03 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We propose a model to explore the dynamics of spin-systems coupled by exchange interaction to the conduction band electrons of a semiconductor material that forms the channel in a ferromagnet/semiconductor/ferromagnet spin-valve structure. We show that recent observation of the novel transient transport signature in a MnAs/GaAs/MnAs spin-valve structure with paramagnetic Mn impurities [D. Saha et al., Phys. Rev. Lett., 100, 196603 (2008)] can be quantitatively understood in terms of current driven dynamical polarization of Mn spins. Using our model of spin polarized transport through Schottky barriers at the two ferromagnet/semiconductor junctions in a spin-valve structure and a dynamical equation describing the paramagnetic impurities coupled to conduction band electrons we explain the scaling behaviour of observed transient features such as the magnitude and time-scale with temperature.