2017/05/24 by R. Martínez-Valdez, H. J. Jiménez-González, Martínez-Valdez, R. +6
Materials Science · Physics and Astronomy · #Copper-based nanomaterials and applications #Multiferroics and related materials #ZnO doping and properties #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.1705.08936
5 pages, 4 figures, 1 table
arxiv created 2017/05/24 · arxiv updated 2017/05/26
The transverse magnetoresistance of thin films of the Diluted Magnetic Semiconductor Zn1-xCoxO:Al on glass was studied for temperatures in the range of 5 to 100 K. Measurements were made on thin films grown by rf magnetron sputtering, with a thickness of approximately 200 nm. ZnO was alloyed with Co to a concentration x of 0.1 and co-doped with a 5.5% wt concentration of Al. The electrical resistivity was measured along the sample surface by the four-point probe method with a magnetic field of up to 4 T applied perpendicular to the surface of the film. The experimental results of the magnetoresistance have been interpreted by means of a semiclassical model that combines a relaxation-time approximation to describe scattering processes in ZnO and a phenomenological approach to the spin-disorder scattering due to the indirect exchange interaction of the magnetic impurities.