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Role of oxygen interstitials in Zn1-xGaxO for faster response to UV light

2019/02/24 by Prashant Kumar Mishra, Tulika Srivastava, Mishra, Prashant Kumar +9
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Ga2O3 and related materials #Gas Sensing Nanomaterials and Sensors #Materials Science (cond-mat.mtrl-sci) #ZnO doping and properties #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.1902.08908

arxiv created 2019/02/24 · openalex publication_date 2019/02/24 · arxiv updated 2019/02/26 · openalex created_date 2019/03/02 · openalex updated_date 2026/07/28

Abstract

ZnO doped with Gallium (Ga3+) demonstrates better crystalline nature and conductivity increases. Latent defect states are suppressed. However, due to the larger charge of Ga3+ oxygen interstitials are generated which control the sensing speed. The conductance increases as a consequence of reduced defect states, especially the oxygen vacancies. The photocurrent increases with Galium incorporation, but a more intense increase in the current reduces the sensitivity.

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