Analysis of Current Hysteresis in Graphene Field Effect Transistor

2018/04/16 by Yuan Yao, Yao, Y.
Engineering · Materials Science · #Advanced Memory and Neural Computing #Advancements in Semiconductor Devices and Circuit Design #Applied Physics (physics.app-ph) #FOS: Physical sciences #Graphene research and applications

paper · pdf · doi:10.48550/arxiv.1804.05542

openalex publication_date 2018/04/16 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

In this report, the hysteresis behaviors of PEI:LiClO4 and PEG:LiClO4 electrolyte gate and back gate Graphene-on-SiO2 FET were analyzed by gate-voltage source-drain current modulation. It is shown that both the sweeping rate and the sweep range will cause hysteresis behaviors in the form of Dirac Point shifting or changes in the current. Different mechanisms including charge trapping and electrical double layer capacitive effect are proposed to explain the behavior qualitatively on both back gated and electrolyte gated FET and partially confirmed with the present experimental results.

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