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Black phosphorene tune electronic properties via directional C-doped

2019/11/28 by Renan Narciso Pedrosa, Pedrosa, Renan N., Wanderlã L. Scopel +3
Materials Science · #2D Materials and Applications #Advanced Thermoelectric Materials and Devices #FOS: Physical sciences #MXene and MAX Phase Materials #Materials Science (cond-mat.mtrl-sci)

paper · pdf · doi:10.48550/arxiv.1911.12725

openalex publication_date 2019/11/28 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The tuning black phosphorene properties such as structural, electronic, transport are explored via substitutional C-doped. We employed density functional theory (DFT) calculations in combination with non-equilibrium Green's function (NEGF) for modeling the systems. Our results revealed that substitutional C-doped phosphorene are energetically favorable, and ruled by exothermic process. We also found that C-doping induces a change of the electric properties, such as a semiconductor-to-metal transition for the most lower concentration and zig-zag C-wire. Moreover, for an armchair C-wire and the most higher concentration the semiconductor character is kept, meanwhile the direct-to-indirect transition is observed to band gap nature. Finally, we show that there exist a dependence of the electronic transport with directional character of the C-doped configuration, and the possibility to control the local electric current probability through the applied gate voltage. The C-doped phosphorene findings demonstrated that, the direction play the role for conductance on 2D platform.

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