2023/12/03 by Naydenov, Sergei, Kapustnyk, Oleksii, Pritula, Igor +4
#Applied Physics (physics.app-ph) #FOS: Physical sciences #Instrumentation and Detectors (physics.ins-det) #Materials Science (cond-mat.mtrl-sci) #Optics (physics.optics)
paper · doi:10.48550/arxiv.2312.01377
Doped semiconductor crystals of solid solution Cd1-xMnxTe:Fe2+ were grown by the high-pressure Bridgman method covering the range of its existence as a zinc blende crystal structure. The concentration of Fe-impurities was approximately 0.001 wt.% in all studied samples. The correlations between the composition of solid solution crystals of Cd1-xMnxTe:Fe2+, band gap, lattice period and the maxima positions of the Fe2+ active ion absorption and emission spectra were found. A new theoretical model based on the principle of additivity for solid solution semiconductor materials has been used for explaining the long-wavelength ''redshift'' of absorption and luminescence bands in the spectra of Cd1-xMnxTe:Fe2+ crystals with increasing solid solution concentration. The obtained results can be used to predict the lasing range for Cd1-xMnxTe:Fe2+ crystal media (in all possible Mn concentrations), which is potentially the longest wavelength active material for mid-IR lasing.