2025/03/05 by Yan, Boxun, Chen, Runzhou, Chang, Mau-Chung Frank
#Classical Physics (physics.class-ph) #FOS: Electrical engineering #FOS: Physical sciences #Signal Processing (eess.SP) #electronic engineering #information engineering
paper · doi:10.48550/arxiv.2503.13481
In this paper, we present an on-chip antenna at 290 GHz that achieves a maximum efficiency of 42% on a low-resistivity silicon substrate for sub-terahertz integrated transceivers. The proposed antenna is based on a dual-slot structure to accommodate a limited ground plane and maintain desired radiation and impedance characteristics across the target frequency range. The antenna impedance bandwidth reaches 39% with compact physical dimensions of 0.24λ0×0.42λ0. Simulation and measurement results confirm its promising antenna performance for potential transceiver and radar applications.