Insulator to semi-metal transition in graphene oxide

2009/05/18 by Goki Eda, Cecilia Mattevi, Eda, Goki +7 · 1 citation
Engineering · Materials Science · #Electron and X-Ray Spectroscopy Techniques #FOS: Physical sciences #Graphene research and applications #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and devices

paper · pdf · doi:10.48550/arxiv.0905.2799

openalex publication_date 2009/05/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Transport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator-semiconductor-semi-metal transitions with reduction. The apparent transport gap ranges from 10 ~ 50 meV and approaches zero with extensive reduction. Measurements at varying degrees of reduction reveal that transport in reduced GO occurs via variable-range hopping and further reduction leads to increased number of available hopping sites.

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