Realization of Ohmic-contact and velocity saturation in organic\n field-effect transistors by crystallized monolayer

2019/08/02 by Boyu Peng, Ho Yuen Lau, Peng, Boyu +5
Engineering · Materials Science · #Advanced Memory and Neural Computing #Applied Physics (physics.app-ph) #Conducting polymers and applications #FOS: Physical sciences #Organic Electronics and Photovoltaics #Organic Light-Emitting Diodes Research

paper · pdf · doi:10.48550/arxiv.1908.01032

openalex publication_date 2019/08/02 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The contact resistance limits the down-scaling and operating range of OFETs.\nWith the monolayer (1L) organic crystals and non-destructive\nmetal/semiconductor interfaces, intrinsic mobility of 12.5 cm2V-1s-1 and Ohmic\ncontact resistance of 40 ohm-cm were achieved. The on/off ratio maintained at\n10³ even at a small VDS of -0.1 mV. High current density of 4.2 uA/um was\nachieved with the 1L-crystal as the active layer. At such high current density,\nthe velocity saturation and channel self-heating effects are observed in OFETs\nfor the first time. In addition to the low contact resistance and\nhigh-resolution lithography, we suggest the thermal management of the high\nmobility OFETs will be the next major challenge to achieve high-speed densely\nintegrated flexible electronics.\n

Citations

• Electron drift velocity in silicon

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