2004/10/12 by S. Lazanu, I. Lazanu, Lazanu, S. +1
Physics and Astronomy · #FOS: Physical sciences #High Energy Physics - Phenomenology (hep-ph) #Instrumentation and Detectors (physics.ins-det) #Materials Science (cond-mat.mtrl-sci) #cond-mat.mtrl-sci #hep-ph #physics.ins-det
paper · pdf · doi:10.48550/arxiv.hep-ph/0410172
arxiv created 2004/10/12 · arxiv updated 2009/12/01
In this contribution we argue that the main discrepancies between model calculations and experimental data for leakage current after hadron irradiation could be explained considering the contributions of primary defects in silicon: vacancy, interstitial and SiFFCD defect. The source of discrepancies between data and previous modelling was tentatively attributed to the SiFFCD defect. Vacancies and interstitials have a major contribution to the current short time after irradiation. If these hypotheses are correct, thus, in conditions of continuous long time irradiation, as e.g. LHC and its upgrades in energy and luminosity, S-LHC and V-LHC respectively, these contributions will represent a major problem.