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Low-loss silicon nitride photonic ICs for single-photon applications

2022/10/28 by Kirill A. Buzaverov, Aleksandr S. Baburin, Buzaverov, Kirill A. +25
Engineering · Physics and Astronomy · #Advanced Fiber Laser Technologies #Advanced Fiber Optic Sensors #Applied Physics (physics.app-ph) #FOS: Physical sciences #Optics (physics.optics) #Photonic and Optical Devices

paper · pdf · doi:10.48550/arxiv.2210.15984

openalex publication_date 2022/10/28 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Low-loss photonic integrated circuits (PICs) are the key elements in future quantum technologies, nonlinear photonics and neural networks. The low-loss photonic circuits technology targeting C-band application is well established across multi-project wafer (MPW) fabs, whereas near-infrared (NIR) PICs suitable for the state-of-the-art single-photon sources are still underdeveloped. Here, we report the labs-scale process optimization and optical characterization of low-loss tunable photonic integrated circuits for single-photon applications. We demonstrate the lowest propagation losses to the date (as low as 0.55 dB/cm at 925 nm wavelength) in single-mode silicon nitride submicron waveguides (220x550 nm). This performance is achieved due to advanced e-beam lithography and inductively coupled plasma reactive ion etching steps which yields waveguides vertical sidewalls with down to 0.85 nm sidewall roughness. These results provide a chip-scale low-loss PIC platform that could be even further improved with high quality SiO2 cladding, chemical-mechanical polishing and multistep annealing for extra-strict single-photon applications.

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