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Electronic and Magnetic Properties of Mn doped Ge Nanowires

2006/08/14 by Jeverson Teodoro Arantes, Arantes, J. T., Antônio J. R. da Silva +3
Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Quantum and electron transport phenomena #Semiconductor materials and interfaces #Surface and Thin Film Phenomena

paper · pdf · doi:10.48550/arxiv.cond-mat/0608315

openalex publication_date 2006/08/14 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Using \it ab initio total energy density-functional theory calculations, we investigate the electronic, structural and magnetic properties of Manganese doped Germanium nanowires. The nanowires have been constructed along the [110] direction and the dangling bonds on the surface have been saturated by hydrogen atoms. We observed that the Mn has lower formation energy at the center of the wire when compared to regions close to the surface. The Mn-Mn coupling has lower energy for a high-spin configuration except when they are first nearest neighbors. These results show that Ge:Mn nanowires are potential candidates for ferromagnetic quasi-one dimentional systems.

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