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High-field Current-carrying Capacity of Semiconducting Carbon Nanotubes

2008/04/24 by Debdeep Jena, Jena, Debdeep
Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.0804.3997

5 pages, 5 figures

arxiv created 2008/06/08 · arxiv updated 2009/12/01

Abstract

It is shown that current saturation in semiconducting carbon nanotubes is indistinguishable from metallic nanotubes if the carrier density is above a critical value determined by the bandgap and the LO phonon energy. This feature stems from the higher number of current-carrying states in the semiconducting tubes due to the van-Hove singularity at the band-edge. Above this critical carrier density, the ensemble saturation velocity at high-fields is found to be independent of the bandgap, but strongly dependent on the carrier density, explaining recent observations.

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