2026/07/22 by Aiichi Iwazaki
Physics and Astronomy · #hep-ph
10 pages, 4 figures
arxiv created 2026/07/30 · arxiv updated 2026/07/31
We propose a new method for detecting dark matter axions using haloscope coupled with a quantum Hall system. When a semiconductor sample exhibiting quantum Hall effect is placed inside the haloscope, two-dimensional ( 2D ) electrons absorb the axion induced radiation. We consider a GaAs sample with surface area S=10 cm2 and small thickness ≪ 1mm. The power is Ps ≃ 5.2 × 10-24W((gγ)/(0.36))2 ((Bt)/(15T))2((V)/(7.2 l))((C)/(0.6)) (\fracρd0.45\mathrmGeVcm-3), where C denotes a form factor of the haloscope with volume V= πR2l ≃ π((2.4)/(ma))2× 102cm((l)/(102cm))≃ 7.2 l; gγ≃ 0.36 ( -0.97) for DFSZ ( KSVZ ) axion model. We assume unloaded quality factor Q0=105 and quality factor of dark matter axion Qa=106. The quality factor Qs of the sample is that Qs≃ 1.1× 106(\frac10-5eVma)((10cm2)/(S)) (\frac0.2e2/hRe(σxx)), where we use measured longitudinal electrical conductivity Re(σxx)≃ (0.2e2)/(h) ( Planck constant h ) of quantum Hall state. When we put parallelly such 5 thin samples with identical quantum Hall states, much larger power Ps≃ 1.5× 10-23W can be obtained. We have signal to noise ratio ≃ 2.3 ((gγ)/(0.36))2 ((Bt)/(15T))2((100mK)/(T)) (\frac10-5eVma)1/2((V)/(7.2 l)) ((C)/(0.6))(\fracρd0.45\mathrmGeVcm-3) (√\fracδtob100s).
SQWARE Quantum Semiconductor Haloscope