2016/10/07 by D. Fuchs, K. Wolff, Fuchs, D. +12
Engineering · Materials Science · Physics and Astronomy · #Advanced Memory and Neural Computing #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor materials and devices #Strongly Correlated Electrons (cond-mat.str-el) #cond-mat.mes-hall #cond-mat.str-el
paper · pdf · doi:10.48550/arxiv.1610.02186
arxiv created 2016/10/07 · openalex publication_date 2016/10/07 · arxiv updated 2016/10/10 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Two-dimensional electron systems found at the interface of SrTiO3-based oxide heterostructures often display anisotropic electric transport whose origin is currently under debate. To characterize transport along specific crystallographic directions, we developed a hard-mask patterning routine based on an amorphous CeO2 template layer. The technique allows preparing well-defined microbridges by conventional ultraviolet photolithography which, in comparison to standard techniques such as ion- or wet-chemical etching, does not induce any degradation of interfacial conductance. The patterning scheme is described in details and the successful production of microbridges based on amorphous Al2O3-SrTiO3 heterostructures is demonstrated. Significant anisotropic transport is observed for T < 30 K which is mainly related to impurity/defect scattering of charge carriers in these heterostructures.