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Which is conducive to high responsivity in a hybrid graphene-quantum dot transistor: Bulk- or layer- heterojunction

2015/04/30 by Yating Zhang, Zhang, Yating, Xiaoxian Song +11
Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.1505.00282

14 pages, 5 figures

arxiv created 2015/04/30 · arxiv updated 2015/05/05

Abstract

Heterojunction, a photoelectric conversion center, plays a critical role in photo detection. A compare study is performed on field effect phototransistors (FEpT) with two typical heterojunctions based on graphene and PbSe quantum dots (QDs) hybrid, including layer-heterojunction (LH) and bulk-heterojunction (BH). LH-FEpT exhibits a higher mobility (μn) 677 cm2V-1s-1, whereas μn of BH-FEpT is as low as 314 cm2V-1s-1, however the higher responsivity (106 A/W) is achieved by the former. Because R is proportional to the product of mobility and transfer rate, and high transfer rate of LH-FEpT overcompensates the shortage of low mobility. Although large area of heterojunction and high mobility benefit high density of photo-induced carriers, lack of transport mechanism becomes to the main constrain factor in BH-FEpT. Therefore, LH-FEpT is a better candidate of near infrared (NIR) photo detectors.

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