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Afterpulsing studies of low noise InGaAs/InP single-photon negative feedback avalanche diodes

2014/11/03 by Boris Korzh, Korzh, Boris, Tommaso Lunghi +7 · 1 citation
Engineering · Physics and Astronomy · #Advanced Optical Sensing Technologies #FOS: Physical sciences #Instrumentation and Detectors (physics.ins-det) #Semiconductor Lasers and Optical Devices #Semiconductor Quantum Structures and Devices #physics.ins-det

paper · pdf · doi:10.48550/arxiv.1411.0653

9 pages, 5 figures

arxiv created 2014/11/03 · openalex publication_date 2014/11/03 · arxiv updated 2014/11/04 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We characterize the temporal evolution of the afterpulse probability in a free-running negative feedback avalanche diode (NFAD) over an extended range, from ∼300 ns to ∼1 ms. This is possible thanks to an extremely low dark count rate on the order of 1 cps at 10% efficiency, achieved by operating the NFAD at a temperatures as low as 143 K. Experimental results in a large range of operating temperatures (223-143 K) are compared with a legacy afterpulsing model based on multiple trap families at discrete energy levels, which is found to be lacking in physical completeness. Subsequently, we expand on a recent proposal which considers a continuous spectrum of traps by introducing well defined edges to the spectrum, which are experimentally observed.

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