2021/03/29 by Evgenii Glushkov, Noah Mendelson, Glushkov, Evgenii +17 · 1 citation
Engineering · #FOS: Physical sciences #Instrumentation and Detectors (physics.ins-det) #Materials Science (cond-mat.mtrl-sci) #Nanowire Synthesis and Applications #Optics (physics.optics) #Photonic and Optical Devices #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.2103.15415
openalex publication_date 2021/03/29 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Adapting optical microscopy methods for nanoscale characterization of defects\nin two-dimensional (2D) materials is a vital step for photonic on-chip devices.\nTo increase the analysis throughput, waveguide-based on-chip imaging platforms\nhave been recently developed. Their inherent disadvantage, however, is the\nnecessity to transfer the 2D material from the growth substrate to the imaging\nchip which introduces contamination, potentially altering the characterization\nresults. Here we present a unique approach to circumvent these shortfalls by\ndirectly growing a widely-used 2D material (hexagonal boron nitride, hBN) on\nsilicon nitride chips, and optically characterizing the defects in the intact\nas-grown material. We compare the direct growth approach to the standard wet\ntransfer method, and confirm the clear advantages of the direct growth. While\ndemonstrated with hBN in the current work, the method is easily extendable to\nother 2D materials.\n