2019/12/10 by Gyanti Prakash Moharana, Moharana, Gyanti Prakash, Rahul Kothari +7
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Induction Heating and Inverter Technology #Magnetic Properties and Applications #Materials Science (cond-mat.mtrl-sci) #Silicon Carbide Semiconductor Technologies #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1912.05921
We wish to improve upon it and then want to resubmit
openalex publication_date 2019/12/10 · arxiv created 2021/10/25 · arxiv updated 2021/10/26 · openalex created_date 2022/07/26 · openalex updated_date 2026/07/28
We report the experimental evidence in support of room temperature ferromagnetism in Ni doped 3C-SiC. Curie temperature is found to be > 350 K. Temperature dependent Electron paramagnetic resonance (EPR) study reveals that the valence state of Ni is 2+ and its environmental symmetry. A clear shift in both XRD and Raman peak confirms the incorporation of Ni in the host lattice. The variation in number of vacancies VSi, VC and the number of free electron due to doping is consistent with the change in magnetization of the system. A direct correlation of ferromagnetic order (FM) with F+ centers exchange mechanism is established. The temperature variation of the anisotropic constant was determined using Law of Approach to Saturation (LAS). It was found that effective magnetic anisotropic constant decreases with increase in temperature. The EPR line width of the annealed sample increases with decrease in temperature, whereas the integrated intensity decreases with decrease in temperature. This could be due to incomplete quenching of orbital angular momentum in SixNi1-xC. In addition to this, the orbital degeneracy of fast relaxing impurity such as Ni in the cubic crystal field is not completely removed. This results in the line width decrease with increase in temperature.