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Stacking-Induced Large-Chern-Number Quantum Anomalous Hall Phases

2025/11/30 by H. Minh Lam, Lam, H. Minh, V. Nam Do +1
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Graphene research and applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Other Condensed Matter (cond-mat.other) #Quantum and electron transport phenomena #Topological Materials and Phenomena

paper · pdf · doi:10.48550/arxiv.2512.00863

openalex publication_date 2025/11/30 · openalex created_date 2025/12/03 · openalex updated_date 2026/07/28

Abstract

We investigate the interaction between quantum anomalous Hall (QAH) phases hosted by two atomically thin hexagonal lattices and demonstrate the emergence of topological phases with large Chern numbers. Interlayer coupling between two graphene-like lattices produces band crossings, while relative sliding preserves gapless Dirac points located at generic, low-symmetry k points. The introduction of Haldane-type complex next-nearest-neighbor hoppings gaps these Dirac points, breaks time-reversal symmetry, and generates a sequence of quantum anomalous Hall phases. Depending on the phase angles ϕ1 and ϕ2 associated with the two layers, the system exhibits QAH states with Chern numbers |C|>2. The nontrivial bulk topology is verified by the presence of the corresponding number of chiral edge modes in ribbon geometries. These high-Chern-number phases originate from the enhanced twisting of the valence-band manifold induced by interlayer stacking.

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