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Synthesis and crystal growth of novel layered bismuthides ATM2Bi2 (A=K, Rb, Cs; TM=Zn, Cd), electron‐deficient compounds with the ThCr2Si2 structure

2023/01/23 by A. I. Shilov, Andrey I. Shilov, K. S. Pervakov +13 · 7 citations
Chemistry · Materials Science · Physics and Astronomy · #Characterization (materials science) #Chemistry #Crystal (programming language) #Crystal growth #Crystal structure #Crystallography #Diffraction #Energy-dispersive X-ray spectroscopy #Inorganic Chemistry and Materials #Iron-based superconductors research #Materials science #Nanotechnology #Optics #Physics #Powder diffraction #Rare-earth and actinide compounds #Scanning electron microscope #Single crystal #Spectroscopy #Ternary operation #X-ray crystallography

paper · pdf · doi:10.1002/zaac.202200298

published in Zeitschrift für anorganische und allgemeine Chemie 649(6-7) (Wiley)

openalex publication_date 2023/01/23 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Abstract We report crystal growth and characterization of 4 new ternary layered bismuthides with compositions KZn 2 Bi 2 ( I ), RbZn 2 Bi 2 ( II ), RbCd 2 Bi 2 ( III ), and CsCd 2 Bi 2 ( IV ) that belong to the vast 122 family of compounds. Single crystals were grown by self‐flux technique and characterized by a combination of powder X‐ray diffraction, scanning electron microscopy, energy‐dispersive X‐ray spectroscopy, and single crystal X‐ray diffraction. All new compounds crystallize in the layered ThCr 2 Si 2 structure type and exhibit the plate‐like morphology with weak bonding between layers. A significant structural difference between ACd 2 Bi 2 and AZn 2 Bi 2 is found and discussed.

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