Zbigniew Galazka

1. Metalorganic vapor phase epitaxy of β-(AlxGa1−x)2O3 (x = 0–0.55) and multilayer structure on (100) β-(Al0.24Ga0.76)2O3 substrates
   2026/03/11 by Saud Bin Anooz, Arub Akhtar, Ta‐Shun Chou +6 · 1 voice
   Materials Science · Physics and Astronomy · Engineering · #Ga2O3 and related materials #GaN-based semiconductor devices and materials #Thin-Film Transistor Technologies