Fei Hui

1. Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride
   2017/02/01 by Chengbin Pan, Yanfeng Ji, Na Xiao +13 · 1 citation
   Engineering · Materials Science · #Advanced Memory and Neural Computing #Ferroelectric and Negative Capacitance Devices #2D Materials and Applications
2. 2D h-BN based RRAM devices
   2016/12/01 by Francesco Maria Puglisi, Luca Larcher, Chengbin Pan +4 · 1 citation
   Engineering · Materials Science · #Advanced Memory and Neural Computing #Graphene research and applications #Ferroelectric and Negative Capacitance Devices